Type
Silicon
Parameters
|
NBXR-72M-190
|
Mono-crystalline silicon
|
Maximum Power
|
Watt
|
190W
|
Production Tolerance
|
|
+3% /-1%
|
Maximum Power voltage
|
V
|
36.36
|
Maximum Power current
|
A
|
5.23
|
Open circuit voltage
|
V
|
44.14
|
Short circuit current
|
A
|
5.61
|
Cell Efficiency
|
|
17.4%
|
Maximum system voltage
|
|
1000V
|
Number of cells
|
|
72pcs
|
Size of cells (wide and high)
|
125mmx125mm
|
Size of module (wide and high)
|
1580*808*45mm
|
Weight per piece Kg
|
15.5
|
Frame (type, material and thickness)
|
Anodizedaluminium alloy frame,45mm thickness
|
Type of junction box
|
IP65 with bypass diode
|
Cable type and length,
Connector type
|
PV cable, 0.9m
MC4,Plug and socket
|
NOCT (Nominal operating cell temperature)
|
47℃(+2℃)
|
Temperature coefficient of Isc
|
+0.05%/℃
|
Temperature coefficient of Voc
|
-0.34%/℃
|
Temperature coefficient of power
|
-0.5%/℃
|
Temperature coefficient of Im
|
+0.05%/℃
|
Temperature coefficient of Vm
|
-0.34%/℃
|
TemperatureRange
|
-40°Cto +90°C
|
Max Load
|
5400 Pa
|
Quality guarantee
|
5 years materials and workmanship warranty and 25 years -80% of output power, 12 years – 90% of output power.
|